Magnetic element and signal processing device

A magnetic element comprising:

• a channel layer;
• a first magnetic electrode which is in contact with the channel layer;
• a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
• a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
• a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
• a first electrode which is connected to the first magnetic electrode;
• a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode,
• the channel layer is a semiconductor layer and further comprises a gate electrode which is provided on the semiconductor layer via a second insulating layer, or
• the channel layer is a layer having a conductive portion in a third insulating layer and further comprises a gate electrode which is provided on the third insulating layer.

A magnetic signal processing device comprising a magnetic element,

• the magnetic element comprising:
• a channel layer;
• a first magnetic electrode which is in contact with the channel layer;
• a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
• a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
• a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
• a second magnetic layer to transfer magnetization to the second magnetic electrode;
• a second intermediate layer which is provided between the second magnetic layer and the second magnetic electrode and has a second insulating layer;
• and
• a first electrode which is connected to the first magnetic electrode;
• and
• a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode, and a magnetization direction of the second magnetic layer being transferred to a magnetization direction of the second magnetic electrode by a magnetic coupling which acts between the second magnetic electrode and the second magnetic layer through the second intermediate layer.

A magnetic signal processing device comprising a magnetic element,

• the magnetic element comprising:
• a channel layer;
• a first magnetic electrode which is in contact with the channel layer;
• a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
• a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
• a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
• a second magnetic layer to transfer magnetization to the second magnetic electrode;
• a second intermediate layer which is provided between the second magnetic layer and the second magnetic electrode and has a second insulating layer;
• a first electrode which is connected to the first magnetic electrode;
• and
• a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode, negative or affirmative arithmetic processing being executed by inputting an input signal of 1 or 0 to the first magnetic layer, and an execution result being output as the first signal.