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US 7,598,577 B2Granted
Magnetic memory device
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi Kajiyama
Life of this patent
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Abstract
A magnetic memory device comprises magneto-resistance elements each including a cylindrical fixed magnetization layer, an insulating film which covers an external surface of the fixed magnetization layer, and a free magnetization layer which faces the fixed magnetization layer through the insulating film and covers a surface of the insulating film, wherein a magnetization direction of the fixed magnetization layer is parallel to a central axis direction of the cylinder.
Claims16
A magneto-resistance element to be used in a magnetic memory device comprising:
- a cylindrical fixed magnetization layer;
- an insulating film which covers an external surface of the fixed magnetization layer;
- and
- a free magnetization layer which faces the fixed magnetization layer through the insulating film and covers a surface of the insulating film,
- wherein a magnetization direction of the fixed magnetization layer is parallel to a central axis direction thereof.
2 more elements
A magnetic memory device comprising:
- magneto-resistance elements each including:
- a cylindrical fixed magnetization layer;
- an insulating film which covers an external surface of the fixed magnetization layer;
- and
- a free magnetization layer which faces the fixed magnetization layer through the insulating film and covers a surface of the insulating film,
- wherein a magnetization direction of the fixed magnetization layer is parallel to a central axis direction thereof,
- a semiconductor substrate on which each of the magneto-resistance elements is formed and which includes at least one transistor;
- and
- a wiring layer and an electrode configured to transfer data to at least one of the magneto-resistance elements through the at least one transistor and arranged parallel to a surface of the semiconductor substrate.
6 more elements
A magnetic memory device, comprising:
- magneto-resistance elements each including:
- a cylindrical fixed magnetization layer;
- an insulating film which covers an external surface of the fixed magnetization layer;
- and
- a free magnetization layer which faces the fixed magnetization layer through the insulating film and covers a surface of the insulating film,
- wherein a magnetization direction of the fixed magnetization layer is parallel to a central axis direction of the cylinder;
- a semiconductor substrate on which each of the magneto-resistance elements is formed and which includes at least one transistor;
- and
- a wiring layer and an electrode formed to sandwich each of the magneto-resistance elements in a vicinity of an outside thereof and to be parallel to a surface of the semiconductor substrate and configured to transfer data to at least one of the magneto-resistance elements through the at least one transistor, wherein the wiring layer is a write wiring layer for each of the magneto-resistance elements which is electrically insulated from the external surface thereof, and the electrode is a read electrode for each of the magneto-resistance elements which is electrically connected to the external surface thereof.
6 more elements
Dependencies are inferred from the claim text.