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US 7,598,573 B2Granted
Systems and methods for voltage distribution via multiple epitaxial layers
OwnerRobert Paul Masleidinventor
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Abstract
Systems and methods for voltage distribution via multiple epitaxial layers. In accordance with a first embodiment of the present invention, an integrated circuit comprises a wafer substrate of a connectivity type. A first epitaxial layer of a connectivity type is disposed upon a second epitaxial layer of an opposite connectivity type, which is disposed upon the wafer substrate.
Claims15
An integrated circuit comprising:
- a wafer substrate of a conductivity type;
- a first epitaxial layer of a conductivity type disposed upon
- a second epitaxial layer of an opposite conductivity type disposed upon said wafer;
- and
- a deep well of said conductivity type for coupling a body biasing voltage from said wafer substrate to body terminals of field effect transistors formed in said first epitaxial layer.
2 more elements
An integrated circuit comprising:
- a first epitaxial layer of a conduction type for conducting a first voltage substantially parallel to a plane of said first epitaxial layer;
- a second epitaxial layer of opposite conduction type underlying said first epitaxial layer for conducting a second voltage substantially parallel to a plane of said second epitaxial layer;
- and
- complementary metal oxide semiconductor devices disposed in said first epitaxial layer.
1 more element
Dependencies are inferred from the claim text.