Semiconductor device
AssigneeSeiko Epson Corporation
InventorsAkinori Shindo, Masatoshi Tagaki, Hideaki Kurita
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Abstract
A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer and including a gate insulating layer and a gate electrode, the transistor being a high voltage transistor in which an insulating layer having a thickness greater than the thickness of the gate insulating layer is formed under an end portion of the gate electrode; an interlayer dielectric formed above the transistor; and an electrode pad formed above the interlayer dielectric and positioned over at least part of the gate electrode when viewed from a top side.
Claims4
A semiconductor device comprising:
- a transistor;
- an interlayer dielectric above the transistor;
- and
- an electrode pad above the interlayer dielectric,
- the transistor including:
- a source region and a drain region in a semiconductor layer;
- a gate insulating layer on the semiconductor layer;
- a gate electrode on the gate insulating layer;
- an insulating layer in the semiconductor layer surrounding the source region, the drain region and the gate insulating layer, the insulating layer having a thickness greater than that of the gate insulating layer;
- and
- opposite side surfaces along a longitudinal direction of the gate electrode are positioned on the insulating layer and at least a portion of the gate electrode overlaps the electrode pad in a plan view.
Dependencies are inferred from the claim text.