Semiconductor memory element, semiconductor memory device and method of fabricating the same

A nonvolatile memory comprising a semiconductor memory element, said semiconductor memory element comprising:

• a semiconductor active layer comprising a channel region and one conductive type impurity region;
• a first insulating film;
• a charge accumulating layer;
• a second insulating film;
• and
• a control gate electrode,
• wherein the nonvolatile memory is formed over a substrate having an insulating surface;
• and
• wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.

A nonvolatile memory comprising a semiconductor memory element, said semiconductor memory element comprising:

• a semiconductor active layer comprising a channel region and one conductive type impurity region;
• a first insulating film;
• a charge accumulating layer;
• a second insulating film;
• and
• a control gate electrode,
• wherein the nonvolatile memory is formed over a substrate having an insulating surface;
• and
• wherein a surface roughness of the channel region is 0.1 nm through 5 nm in an rms value.

A nonvolatile memory comprising a semiconductor memory element, said semiconductor memory element comprising:

• a charge accumulating layer surrounded by an insulating film between a semiconductor active layer and a control gate electrode, said semiconductor active layer comprising a channel region and one conductive type impurity region,
• wherein the nonvolatile memory is formed over a substrate having an insulating surface;
• wherein the channel region is a polycrystal semiconductor film crystallized by being irradiated with continuously oscillating laser,
• wherein the semiconductor active layer is constituted by aggregating a plurality of crystal grains elongated in the same direction, and
• wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.

A nonvolatile memory comprising a semiconductor memory element, said semiconductor memory element comprising:

• a charge accumulating layer surrounded by an insulating film between a semiconductor active layer and a control gate electrode, said semiconductor active layer comprising a channel region and one conductive type impurity region,
• wherein the nonvolatile memory is formed over a substrate having an insulating surface;
• and
• wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.

A nonvolatile memory comprising a semiconductor memory element, said semiconductor memory element comprising:

• a charge accumulating layer surrounded by an insulating film between a semiconductor active layer and a control gate electrode, said semiconductor active layer comprising a channel region and one conductive type impurity region,
• wherein the nonvolatile memory is formed over a substrate having an insulating surface;
• and
• wherein a surface roughness of the channel region is 0.1 nm through 5 nm in an rms value.