Image sensor having improved sensitivity and method of manufacturing the same

#This application is based on and claims priority to Korean Patent Application No. 10-2006-0076334 filed on Aug. 11, 2006 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.

#1. Field of the Invention

#The present invention relates generally to an image sensor and a method of manufacturing the same, and more particularly to a CMOS image sensor and a method of manufacturing the same.

#The above and other objects, features and advantages of the present invention will be more clearly understood from the following detailed description, taken in conjunction with the accompanying drawings, in which:

#FIG. 1 is a plan view illustrating an image sensor according to an embodiment of the present invention;

#FIG. 2 is a sectional view taken along line A-A′ of FIG. 1 illustrating an image sensor according to the embodiment of the present invention; and

#Reference now should be made to the drawings, in which the same reference numerals are used throughout the different drawings to designate the same or similar components. Embodiments of the present invention are described in detail below with reference to the accompanying drawings.

#It will be understood that when an element is referred to as being “on” or “connected” or “coupled” to another element, it can be directly on or connected or coupled to the other element or intervening elements can be present. In contrast, when an element is referred to as being “directly on” or “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.).

#FIG. 1 is a plan view illustrating a image sensor CIS according to an embodiment of the present invention. Referring to FIG. 1, the image sensor CIS includes a sensor region 10 including a main sensor region 20, a dummy sensor region 30, and a peripheral circuit region 40 surrounding the sensor region 10.