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US 7,598,550 B2Granted
MOS transistor and manufacturing method thereof
AssigneeDongbu Electronics Co., Ltd.
InventorHyung Sun Yun
Life of this patent
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Abstract
There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer, wherein the top surface of the gate is exposed, a gate oxide layer formed on the insulating layer and the gate, a silicon layer formed on the gate oxide layer, and a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer.
Claims9
A MOS transistor comprising:
- a substrate on which an insulating layer is formed, wherein the insulating layer is formed on an entire top surface of the substrate;
- a gate embedded in the insulating layer, wherein a top surface of the gate is not covered by the insulating layer and wherein a bottom surface of the insulating layer is lower than a bottom surface of the gate, wherein the gate is formed in a trench in the insulating layer;
- a gate oxide layer formed on top of the insulating layer and the gate, wherein the top surface of the gate is in contact with the gate oxide layer;
- a silicon layer formed on the gate oxide layer;
- and
- a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer,
- wherein the gate oxide layer is in contact with an entire bottom edge of both the source region and drain region.
4 more elements
A MOS transistor comprising:
- an insulating substrate, wherein the insulating substrate is formed on an entire top surface of a substrate;
- a gate embedded in the insulating substrate, wherein a top surface of the gate is not covered by the insulating layer, wherein the gate is formed in a trench in the insulating substrate, and wherein a bottom surface of the insulating layer is lower than a bottom surface of the gate;
- a gate oxide layer formed on top of the insulating substrate and the gate, wherein the top surface of the gate is in contact with the gate oxide layer;
- a silicon layer formed on the gate oxide layer;
- and
- a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer.
3 more elements
Dependencies are inferred from the claim text.