Semiconductor device in which the emitter resistance is reduced

A semiconductor device comprising:

• a semiconductor substrate of a first general conductivity type, the semiconductor substrate being configured to operate as a collector region;
• a base region of a second general conductivity type, the base region being disposed on the semiconductor substrate;
• an emitter region of the first general conductivity type, the emitter region being formed in a form of a grid in a surface of the base region so that the grid defines islands of the base region surrounded by the emitter region;
• a base electrode strip connecting the islands of the base region;
• an emitter electrode strip disposed on the grid of the emitter region along the base electrode strip;
• an emitter electrode plate disposed above the base electrode strip and the emitter electrode strip, the emitter electrode plate being connected to the emitter electrode strip and not connected to the base electrode strip;
• a base electrode plate disposed over the semiconductor substrate and adjacent the emitter electrode plate, the base electrode plate covering the grid of the emitter region and other islands of the base region defined by the grid that are not covered by the emitter electrode plate;
• and
• an electrode wiring connecting the base electrode strip and the base electrode plate and disposed along an edge of the semiconductor substrate,
• wherein the base electrode strip is connected to the base electrode plate.