Organic transistor with light emission, organic transistor unit and display device incorporating the organic transistor
AssigneeRicoh Company, Ltd.
InventorTakuro Sekiya
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AssigneeRicoh Company, Ltd.
InventorTakuro Sekiya
Estimating the term…
An organic transistor includes: a substrate made of electrically conductive material or semiconductor material; an insulating layer on the substrate; and an organic semiconductor layer and a pair of electrodes on the insulating layer, wherein a configuration is made such that: the organic semiconductor layer is sealed by a translucent member; a voltage is applied between the pair of electrodes in a range such that the organic semiconductor layer emits light; further a voltage is applied to the substrate so as to control the light emission of the organic semiconductor layer; and light emitted by the organic semiconductor layer can be taken out via the translucent member.
A display device comprising:
A display device comprising:
A display device comprising:
Dependencies are inferred from the claim text.
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OLED displays: active-matrix OLED [AMOLED] displays
In which radiation controls flow of current through the devices, e.g. photoresistors: light-sensitive field-effect devices, e.g. phototransistors
Organic light-emitting devices: organic light-emitting transistors
Constructional details: electrodes
About 9 months of term left · ends 20 Jul 2027 (estimated)
1. Field of the Invention
The present invention relates to an organic transistor and associates, and, in particular, to an organic thin-film transistor having light emission function, as well as a display device employing it.
2. Description of the Related Art
Other objects and further features of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings:
FIG. 1 shows an example of a configuration (a top gate type) of an organic transistor device according to the present invention;
FIG. 2 shows an example of a configuration (a bottom gate type) of an organic transistor device according to the present invention;
Embodiments of the present invention will now be described with reference to figures.
The light emitting type organic thin-film transistor device according to the present invention is generally classified into a top gate type and a bottom gate type. A light emitting type organic thin-film transistor device according to the present invention in the top gate type has a source electrode and a drain electrode, in contact with an organic semiconductor layer, on a supporting body, and further thereon, has a gate electrode through a gate insulating layer. In the bottom gate type, a gate electrode is provided on a supporting body first, and a source electrode and a drain electrode are provided which are joined by means an organic semiconductor layer, through a gate insulating layer. Specific layer structure examples of the devices (sectional views of single devices) are shown in FIGS. 1 through 3.
FIG. 1 shows one example of a layer configuration of a top gate type of a light emitting type organic thin-film transistor device. As shown, laminated layers are produced with a substrate or a sheet as a supporting body 1, and thereon, an organic semiconductor layer 2 is produced. Further, a source electrode 3 as a first electrode and a drain electrode 4 as a second electrode, electrically connected to the organic semiconductor layer 2, are arranged in a predetermined position with a predetermined distance. In an area between the pair of these electrodes, a gate electrode 6 as a third electrode is disposed through a gate insulating layer 5. In other words, the gate insulating layer 5 is disposed to cover a top surface of the organic semiconductor layer 2 and the source electrode 3 and the drain electrode 4, and further, the gate electrode 6 is disposed at an appropriate position on the gate insulating layer 5 (position between the source electrode 3 and the drain electrode 4). Then, a voltage is applied between the source electrode 3 and the drain electrode 4 in such a range that the organic semiconductor layer 2 emits light. Further, a voltage is applied to the gate electrode so as to control the light emission.