Carbon precursors for use during silicon epitaxial film formation

A method of forming an epitaxial film on a substrate comprising:

• (a) providing a substrate;
• (b) exposing the substrate to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, so as to form an epitaxial film on at least a portion of the substrate;
• and
• (c) exposing the substrate to an etchant so as to etch the epitaxial film and any other films formed during step (b), the etchant comprising a compound from the group consisting of HCl and Cl2, and combinations thereof, and wherein a larger flow rate of HCl relative to Cl2 is employed.

A method of forming an epitaxial film on a substrate comprising:

• (a) providing a substrate, wherein the substrate is at least one of a silicon-on-insulator substrate and a bulk substrate, for use in recess source/drain metal oxide semiconductor field effect transistors;
• (b) exposing the substrate to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, so as to form an epitaxial film on at least a portion of the substrate;
• and
• (c) exposing the substrate to an etchant so as to etch the epitaxial film and any other films formed during step (b), wherein the etchant comprises a compound from the group consisting of HCl and Cl2, and combinations thereof, and further wherein a larger flow rate of HCl relative to Cl2 is employed.

A method of forming an epitaxial film on a substrate comprising:

• (a) providing a substrate;
• (b) exposing the substrate to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, so as to form an epitaxial film on at least a portion of the substrate;
• and
• (c) exposing the substrate to an etchant so as to etch the epitaxial film and any other films formed during step (b) for forming channels for metal oxide semiconductor field effect transistor devices, the etchant comprising a compound from the group consisting of HCl and Cl2, and combinations thereof and wherein a larger flow rate of HCl relative to Cl2 is employed.