Methods of filling trenches using high-density plasma deposition (HDP)
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Won Cha, Kyu-tae Na
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Abstract
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.
Claims22
A method of forming an integrated circuit device, the method comprising:
- forming a plurality of patterns on an integrated circuit substrate, the plurality of patterns defining at least one gap on the integrated circuit substrate;
- forming a first high-density plasma layer on the integrated circuit substrate including the at least one gap using a first reaction gas;
- etching the first high-density plasma layer using an etch gas including nitrogen fluoride (NF3);
- and
- forming a second high-density plasma layer on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride (NF3), wherein the second reaction gas is free of an inert gas.
The method of claim of 1, wherein etching further comprises wet etching a portion of the first high-density plasma layer before forming the second high-density plasma layer.
The method of claim of 1, wherein forming the second high-density plasma layer comprises forming the second high-density plasma layer at a temperature of from about 650° C. to about 800° C.
A method of forming an integrated circuit device, the method comprising:
- forming a plurality of patterns on an integrated circuit substrate, the plurality of patterns defining at least one gap on the integrated circuit substrate;
- forming a first high-density plasma layer on the integrated circuit substrate including the at least one gap using a first reaction gas including oxygen (O2) and silane (SiH4);
- partially etching the first high-density plasma layer by chemically dry etching the first high-density plasma layer using an etch gas including oxygen (O2) and nitrogen fluoride (NF3), and
- forming a second high-density plasma layer on the partially etched first high-density plasma layer using a second reaction gas including oxygen (O2), silane (SiH4) and nitrogen fluoride (NF3), wherein the second reaction gas is free of an inert gas.
The method of claim of 10, wherein etching further comprises wet etching a portion of the first high-density plasma layer before forming the second high-density plasma layer.
The method of claim of 10, wherein forming of the second high-density plasma layer comprises forming the second high-density plasma layer at a temperature of from about 650° C. to about 800° C.
A method of forming an integrated circuit, the method comprising:
- forming a first high-density plasma layer, on an integrated circuit substrate defining a trench therein, using a first reaction gas including oxygen (O2) and silane (SiH4);
- partially etching the first high-density plasma layer by chemically dry etching the first high-density plasma layer using an etch gas including oxygen (O2) and nitrogen fluoride (NF3);
- and
- forming a second high-density plasma layer on the partially etched first high-density plasma layer using a second reaction gas including oxygen (O2), silane (SiH4) and nitrogen fluoride (NF3), wherein the second reaction gas is free of an inert gas.
The method of claim of 17, wherein etching further comprises wet etching a portion of the first high-density plasma layer before forming the second high-density plasma layer.
Dependencies are inferred from the claim text.