Feature patterning methods
AssigneeInfineon Technologies AG
InventorHaoren Zhuang
Life of this patent
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Abstract
Methods of patterning features, methods of patterning material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of patterning features includes providing a workpiece having a material layer disposed thereon. A hard mask is formed over the material layer. A first pattern is formed in an upper portion of the hard mask, and a second pattern is formed in the upper portion of the hard mask. The first pattern and the second pattern are formed in a lower portion of the hard mask and the material layer, forming the features in the material layer.
Claims25
A method of patterning features, the method comprising:
- providing a workpiece having a material layer disposed thereon;
- forming a hard mask over the material layer;
- forming a first pattern in an upper portion of the hard mask;
- forming a second pattern in the upper portion of the hard mask;
- and
- forming the first pattern and the second pattern in a lower portion of the hard mask and the material layer, forming the features in the material layer, wherein forming the first pattern in the upper portion of the hard mask and forming the second pattern in the upper portion of the hard mask comprise forming the first pattern and the second pattern in about 50% or greater of a thickness of the hard mask.
A method of patterning a material layer of a semiconductor device, the method comprising:
- providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon;
- forming a hard mask over the material layer;
- forming a first masking material over the hard mask;
- patterning the first masking material with a first pattern;
- transferring the first pattern of the first masking material to an upper portion of the hard mask using a first etch process;
- removing the first masking material;
- forming a second masking material over the hard mask;
- patterning the second masking material with a second pattern, the second pattern being different than the first pattern;
- transferring the second pattern of the second masking material to the upper portion of the hard mask using a second etch process;
- and
- transferring the first pattern and the second pattern to a lower portion of the hard mask and the material layer using a third etch process, wherein forming the first masking material or forming the second masking material comprises forming a tri-layer photoresist.
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece;
- forming a material layer over the workpiece;
- forming a hard mask over the material layer;
- disposing a first masking material over the hard mask;
- patterning the first masking material using a first lithography mask, forming a first portion of a pattern in the first masking material;
- forming the first portion of the pattern in an upper portion of the hard mask using the first masking material as a mask and using a first etch process;
- removing the first masking material;
- disposing a second masking material over the patterned hard mask;
- patterning the second masking material using a second lithography mask, forming a second portion of a pattern in the second masking material;
- forming the second portion of the pattern in the upper portion of the hard mask using the second masking material as a mask and using a second etch process;
- removing the second masking material;
- and
- forming the first portion of the pattern and the second portion of the pattern in a lower portion of the hard mask and forming the first portion of the pattern and the second portion of the pattern in the material layer using the upper portion of the hard mask as a mask and using a third etch process, wherein forming the first pattern and forming the second pattern in the material layer comprise forming features comprising a plurality of transistor gates.
A method of patterning features, the method comprising:
- providing a workpiece having a material layer disposed thereon;
- forming a hard mask over the material layer;
- forming a first pattern in an upper portion of the hard mask;
- forming a second pattern in the upper portion of the hard mask;
- and
- forming the first pattern and the second pattern in a lower portion of the hard mask and the material layer, forming the features in the material layer, wherein forming the first pattern and forming the second pattern in the material layer comprise forming features comprising a plurality of transistor gates.
Dependencies are inferred from the claim text.