Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole

A method for manufacturing a semiconductor device by using a dual damascene process, comprising the steps of:

• preparing a component having a first insulating film on a substrate;
• disposing a layer on the first insulating film;
• imprinting a mold having a pattern on the layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via;
• etching the first insulating film by using the second insulating film as a mask so as to form a second via, which is longer than the first via and which is communicated to the first via, in the first insulating film;
• etching the second insulating film so as to communicate the wiring trench to the second via;
• and
• filling an electrically conductive material in the wiring trench and the second via.