Method to remove beol sacrificial materials and chemical residues by irradiation
AssigneeInternational Business Machines Corporation
InventorsQinghuang Lin, Elbert E. Huang, Christy S. Tyberg, Ronald A. DellaGuardia
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Abstract
A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.
Claims32
A method for fabricating an interconnect structure comprising a low-k interlayer dielectric by a damascene process comprising:
- applying a sacrificial fill material onto an interconnect structure that comprises a prepatterned topography;
- defining a pattern into the interconnect structure by lithographic and dry etch transfer processes;
- removing said sacrificial fill material by an irradiation process in an environment comprising of at least one gas or vapor selected from the group consisting of amine, silylamine and chlorosilylamine to remove the sacrificial fill material and promote repair of the low-k interlayer dielectric.
A method for fabricating an interconnect structure comprising a low-k interlayer dielectric by a damascene process comprising:
- applying a sacrificial fill material onto an interconnect structure that comprises a prepatterned topography;
- defining a pattern into the interconnect structure by lithographic and dry etch transfer processes;
- removing said sacrificial fill material by an irradiation process, wherein said sacrificial fill materials is comprised of an organic system comprised of C, O, H and N, and is one or more components and has a structure selected from the group consisting of linear, branched, hyperbranched and star;
- is a homopolymer, a copolymer, or a polymer mixture and may be comprised of at least one of the constituents selected from the group consisting of poly(styrenes), poly(esters), poly(acrylates), poly(methacrylates), and poly(ethers), poly(amides), Poly(imides), poly(norbornenes), poly(carbonates), poly(sulfone), poly(ether-sulfone), poly(ethylenes), poly(propylenes), epoxy resins, poly(urethanes), poly(alkanes), poly(dienes) poly(vinyl alcohol), poly(vinyl ethers), poly(acrylic acid), and poly(ureas).
A method for fabricating an interconnect structure comprising a low-k interlayer dielectric by a damascene process comprising:
- applying a sacrificial fill material onto an interconnect structure that comprises a prepatterned topography,
- defining a pattern into the interconnect structure by lithographic and dry etch transfer processes;
- removing said sacrificial fill material by an irradiation process,
- wherein said sacrificial fill material comprises a crosslinking functional group as one of a separate component and a group bound to the polymer.
Dependencies are inferred from the claim text.