Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures

Abstract

Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from the active surface through a conductive element thereon and a portion of the semiconductor substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from the back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a semiconductor substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying semiconductor substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by ablation or drilling from the back surface of the semiconductor substrate followed by dry etching to complete the through via and expose the underside of the conductive element.

Dependencies are inferred from the claim text.