Method for direct bonding of metallic conductors to a ceramic substrate
AssigneeTechnion Research & Development Foundation Limited
InventorArnon Hirshberg
Life of this patent
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Abstract
A method to provide direct bonding of wires to silicon for microelectronic and micro-electromechanical systems (MEMS). The method includes preparing a rough “pothole” during one of the many deep etch steps already provided in MEMS fabrication. The method also includes roughening of the smooth silicon surface in and around the rough pothole and plastically deforming a ball-bond into the rough pothole, such that the interconnection will eliminate a costly metallization layer, and thereby lower fabrication expenses and allow high temperature processing.
Claims16
A method for providing direct bonding of wires to silicon for microelectronics and microelectromechanical systems (MEMS), said method comprising:
- preparing a rough pothole during one of the many deep etch steps already performed in microelectronics and MEMS fabrication;
- roughening of the smooth silicon surface in and around said rough pothole;
- and
- plastically deforming a ball-bond into said rough pothole, such that the interconnection will eliminate a costly metallization layer, and thereby lower fabrication expenses and enable further high temperature processing.
A system for providing direct bonding of wires to silicon for microelectronics and microelectromechanical systems (MEMS), said system comprising:
- means for preparing a rough pothole during one of the many deep etch steps already performed in microelectronics and MEMS fabrication;
- means for roughening of the smooth silicon surface in and around said rough pothole;
- and
- means for plastically deforming a ball-bond into said rough pothole, such that the interconnection will eliminate a costly metallization layer, and thereby lower fabrication expenses and enable further high temperature processing.
Dependencies are inferred from the claim text.