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US 7,598,163 B2Granted
Post-seed deposition process
OwnerJohn Callahan, John Trezzainventors
Life of this patent
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Abstract
A method involves pattern etching a photoresist that is located on a wafer that contains a deposited seed layer to expose portions of the seed layer, plating the wafer so that plating metal builds up on only the exposed seed layer until the plating metal has reached an elevation above the seed layer that is at least equal to a thickness of the seed layer, removing the solid photoresist, and removing seed layer exposed by removal of the photoresist and plated metal until all of the exposed seed layer has been removed.
Claims20
A methods comprising:
- depositing a seed layer onto a wafer;
- forming a patterned resist on top of the seed layer, wherein the patterned resist has one or more openings exposing at least one portion of the seed layer, and wherein the patterned resist overhangs at least a part of a via;
- plating the exposed at least one portion of the seed layer with a layer of metal, wherein the layer of metal extends above an upper surface of the seed layer;
- removing the resist;
- and
- removing at least one portion of the seed layer that was exposed by said removing the resist.
3 more elements
A method, comprising:
- patterning a resist that is located on a seed layer of a wafer to expose at least one portion of the seed layer and to overhang at least a part of a via;
- plating the at least one exposed portion of the seed layer with a layer of metal, wherein the layer of metal extends above an upper surface of the seed layer;
- removing the resist;
- and
- subsequently removing the at least one exposed portion of the seed layer and at least a portion of the metal layer.
2 more elements
Dependencies are inferred from the claim text.