Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode on a semiconductor substrate via a gate-insulating film;
• introducing a first impurity into the semiconductor substrate using the gate electrode as a mask;
• activating the first impurity by a first annealing treatment of an annealing time of not longer than 100 milliseconds;
• forming a side wall-insulating film on each side surface of the gate electrode;
• introducing a second impurity of the same conductive type as the first impurity into the semiconductor substrate deeper than an introduced portion of the first impurity using the gate electrode and the side wall-insulating film as masks;
• introducing a diffusion-controlling substance into the semiconductor substrate to control a diffusion of the first impurity in the step of introducing the second impurity;
• and
• further activating the first impurity while activating the second impurity by a second annealing treatment.