Method and device for growing pseudomorphic AlInAsSb on InAs
AssigneeHRL Laboratories, LLC
InventorsPeter Deelman, Ken Elliott, David Chow
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Abstract
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
Claims10
A method of producing a material that mimics the properties of an AlInAsSb quaternary material and is lattice matched to InAs material, the method comprising:
- providing an InAs layer;
- growing a plurality of group III-V ternary layers, each ternary layer having two group III elements and one group V element;
- and
- growing a plurality of group III-V quarternary layers, each quarternary layer having two group III elements and two group V elements;
- wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer;
- wherein at least one group III-V quarternary layer is grown in direct contact with the InAs layer;
- and
- wherein each group III-V quarternary layer is about or less than 18 Angstroms thick.
A device having a material that mimics the properties of an AlInAsSb quaternary material and is lattice matched to InAs material comprising:
- an InAs layer;
- a plurality of group III-V ternary layers, each ternary layer having two group III elements and one group V element;
- and
- a plurality of group III-V quarternary layers, each quarternary layer having two group III elements and two group V elements;
- wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer;
- wherein at least one group III-V quarternary layer is grown in direct contact with the InAs layer;
- and
- wherein each group III-V quarternary layer is about or less than 18 Angstroms thick.
Dependencies are inferred from the claim text.