Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
AssigneesCommissariat A L' Energie Atomique, STMicroelectronics S.r.l.
InventorsJean-Francois Damlencourt, Yves Morand, Laurent Clavelier
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Abstract
A method for producing a microelectronic device comprising a plurality of Si1-yGey based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents.
Claims8
A method for producing a microelectronic device comprising a plurality of Si1-yGey based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents, the method comprising:
- a) forming, on a plurality of Si based semi-conductor zones and of different thicknesses that rest on a substrate, a Si1-xGex based semi-conductor layer (wherein 0<x<1 and x<y), and
- b) oxidizing the Si1-xGex based semi-conductor layer.
A method for producing a microelectronic device comprising a plurality of Si1-yGey based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents, the method comprising:
- a) forming, on a plurality of Si based semi-conductor zones and of different thicknesses that rest on a substrate, a Si1-xGex based semi-conductor layer (wherein 0<x<1 and x<y), and
- b) oxidizing the Si1-xGex based semi-conductor layer,
- wherein the semi-conductor zones of different thicknesses are zones of a Si based layer in the form of a bevel, and
- wherein the bevel form of the Si based layer has been formed prior to a) by:
- forming a mask in the form of a bevel on the Si based layer,
- oxidizing the Si layer through said mask in the form of a bevel, and
- removing said mask in the form of a bevel.
A method for producing a microelectronic device comprising a plurality of Si1-yGey based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents, the method comprising:
- a) forming, on a plurality of Si based semi-conductor zones and of different thicknesses that rest on a substrate, a Si1-xGex based semi-conductor layer (wherein 0<x<1 and x<y), and
- b) oxidizing the Si1-xGex based semi-conductor layer,
- wherein the semi-conductor zones of different thicknesses are zones of a Si based layer in the form of a bevel,
- wherein the bevel form of the Si based layer has been formed prior to a) by:
- forming a mask in the form of a bevel on the Si based layer,
- oxidizing the Si layer through said mask in the form of a bevel, and
- removing said mask in the form of a bevel, and
- wherein the mask in the form of a bevel is based at least on an SiO2 insulating material.
Dependencies are inferred from the claim text.