Method for producing an integrated circuit with a trench transistor structure

A method for producing an integrated circuit including a semiconductor having a source zone and a body zone of a trench transistor structure and a component zone having a net doping of the same conduction type as the source zone, comprising:

• providing a semiconductor body, including at least two trenches and between which a mesa region is arranged;
• carrying out a first diffusion method, by which dopant atoms of a first conduction type are introduced via a first side into the mesa region and into a component region lying outside the cell region;
• and
• carrying out a second diffusion method, by which dopant atoms of a second conduction type are introduced via the first side into the mesa region and into the component region, which form the source zone in the mesa region, the diffusion methods being coordinated with one another in such a way that the dopant atoms of the second conduction type indiffuse further than the dopant atoms of the first conduction type in the vertical direction in the component region.

A method for producing an integrated circuit including a source zone and a body zone of a trench transistor structure and a component zone having a net doping of the same conduction type as the source zone, comprising:

• providing a semiconductor body having a cell region, in which are arranged at least two trenches, and a mesa region;
• carrying out a first diffusion method, which forms the body zone in the mesa region;
• and
• carrying out a second diffusion method, which forms the source zone in the mesa region, the diffusion methods being coordinated with one another in such a way that dopant atoms of the second diffusion method indiffuse further than dopant atoms of the first diffusion method in a vertical direction in the component region, and indiffuse not as far as the dopant atoms of the first diffusion method in the vertical direction in the mesa region.