Single chip data processing device with embedded nonvolatile memory and method thereof

A method of forming a single chip data processing device, comprising:

• forming a substrate of a first conductivity type with a first dopant concentration;
• forming a first well of the first conductivity type in the substrate;
• forming a second well formed in the substrate deeper than the first well and with a higher dopant concentration than the first dopant concentration;
• forming a third well of a second conductivity type that is opposite to the first conductivity type;
• forming a fourth well of the second conductivity type in the substrate and being shallower than the third well;
• and
• forming a nonvolatile memory cell formed on the second well.

A method of forming a single chip data processing device, comprising:

• forming a first well in a substrate of a first conductivity type having a first dopant concentration, the first well being of the first conductivity type;
• forming a second well in the substrate, the second well being of the first conductivity type and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration;
• forming a nonvolatile memory cell on the second well, the nonvolatile memory cell including at least a first transistor;
• and
• forming a second transistor formed on the first well, wherein
• the second transistor is a low-voltage transistor having a lower driving voltage range than the first transistor.

A method of forming a single chip data processing device, the method comprising:

• forming a first well in a substrate of a first conductivity type having a first dopant concentration, the first well being of the first conductivity type;
• forming a second well in the substrate, the second well being of the first conductivity type and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration;
• forming a nonvolatile memory cell on the second well;
• and
• forming a third well in the substrate, the third well being deeper than the first well and of an opposite conductivity type to that of the second well.

A method of forming a single chip data processing device, the method comprising:

• forming a first well in a substrate of a first conductivity type, the substrate having a first dopant concentration, and the first well being of the first conductivity type;
• forming a second well of the first conductivity type in the substrate, the second well being deeper than the first well, and having a higher dopant concentration than the first dopant concentration;
• forming a nonvolatile memory cell on the second well;
• and
• forming a transistor on the substrate;
• wherein the doping profile of the first well is identical to that of a field isolation region of the transistor.