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US 7,598,138 B2Granted
Semiconductor device manufacturing method
AssigneeFujitsu Microelectronics Limited
InventorTohru Fujita
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Abstract
Provided is a semiconductor device manufacturing method including the steps of: forming an n-type impurity diffusion region by ion-implanting arsenic into a capacitor formation region of a silicon substrate under a condition that a beam current is not less than 1 μA but less than 3 mA; forming a capacitor dielectric film on the capacitor formation region of the silicon substrate; and forming a capacitor upper electrode on the capacitor dielectric film.
Claims10
A semiconductor device manufacturing method comprising:
- forming an impurity diffusion region in a semiconductor substrate by ion-implanting an impurity into a capacitor formation region of the semiconductor substrate under a condition that a beam current is equal to or more than 1 μA but less than 3 mA;
- forming a capacitor dielectric film on and in contact with the impurity diffusion region of the semiconductor substrate by thermally oxidizing a surface of the semiconductor substrate in the impurity diffusion region to form a thermal oxidation film which serves as the capacitor dielectric film;
- and
- forming a capacitor upper electrode on the capacitor dielectric film,
- wherein, when forming the capacitor dielectric film, a gate insulating film formed of the same insulating film as that forming the capacitor dielectric film is formed on a transistor formation region of the semiconductor substrate, and
- wherein, when forming the capacitor upper electrode, a gate electrode formed of the same conductive film as that forming the capacitor upper electrode is formed on the gate insulating film.
3 more elements
Dependencies are inferred from the claim text.