Light-emitting device and method for manufacturing the same

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film containing an impurity element having a conductivity type over the first semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the second semiconductor film;
• forming a source region and a drain region by removing a part of the second semiconductor film using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the first semiconductor film;
• forming an island-like semiconductor film and an island-like gate insulating film by removing a part of the first semiconductor film and a part of the gate insulating film using the source electrode, the drain electrode, and the insulating film as a mask;
• wherein a contact hole is formed by removing at least a part of the gate insulating film over a gate electrode of the second semiconductor element;
• and a wiring for connecting the source electrode or the drain electrode of the first semiconductor element to the gate electrode of the second semiconductor element is formed by discharging a composite containing a third conductive material via the contact hole.

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film containing an impurity element having a conductivity type over the first semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the second semiconductor film;
• forming a source region and a drain region by removing a part of the second semiconductor film using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the first semiconductor film;
• forming an island-like semiconductor film by removing a part of the first semiconductor film using the source electrode, the drain electrode, and the insulating film as a mask;
• wherein a column-like conductor is formed by discharging a composite containing a third conductive material which is the same or different from the first conductive material above a part of a gate electrode of the second semiconductor element before forming the gate insulating film;
• and a wiring for connecting the source electrode or the drain electrode of the first semiconductor element to the column-like conductor is formed by discharging a composite containing a fourth conductive material.

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film containing an impurity element having a conductivity type over the semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the second semiconductor film;
• forming a source region and a drain region by removing a part of the second semiconductor film using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the first semiconductor film;
• forming an island-like semiconductor film and an island-like gate insulating film by removing a part of the first semiconductor film and a part of the gate insulating film using the source electrode, the drain electrode, and the insulating film as a mask;
• wherein a column-like conductor is formed by discharging a composite containing a third conductive material which is the same or different from the first conductive material above a part of a gate electrode of the second semiconductor element before forming the gate insulating film;
• and a wiring for connecting the source electrode or the drain electrode of the first semiconductor element to the column-like conductor is formed by discharging a composite containing a fourth conductive material.

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film containing an impurity element having a conductivity type over the semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the second semiconductor film;
• forming a source region and a drain region by removing a part of the second semiconductor film using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the first semiconductor film;
• forming an island-like semiconductor film by removing a part of the first semiconductor film using the source electrode, the drain electrode, and the insulating film as a mask;
• wherein a wiring is formed by discharging a composite containing a third conductive material so as to be in contact with the source electrode or the drain electrode of the first semiconductor element;
• a contact hole is formed by removing at least a part of the gate insulating film over a gate electrode of the second semiconductor element using the wiring as a mask;
• and a conductor for connecting the wiring to the gate electrode of the second semiconductor element is formed by discharging a composite containing a fourth conductive material over the contact hole.

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film containing an impurity element having a conductivity type over the semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the second semiconductor film;
• forming a source region and a drain region by removing a part of the second semiconductor film using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the first semiconductor film;
• forming an island-like semiconductor film and an island-like gate insulating film by removing a part of the first semiconductor film and a part of the gate insulating film using the source electrode, the drain electrode, and the insulating film as a mask;
• wherein a wiring which is in contact with the source electrode or the drain electrode is formed by discharging a composite containing a third conductive material so as to be in contact with the source electrode or the drain electrode of the first semiconductor element;
• a contact hole is formed by removing at least a part of the gate insulating film over a gate electrode of the second semiconductor element using the wiring as a mask;
• and a conductor for connecting the wiring to the gate electrode of the second semiconductor element is formed by discharging a composite containing a fourth conductive material over the contact hole.

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode
• forming a semiconductor film over the gate insulating film;
• forming a semiconductor film containing an impurity element having a conductivity type over the semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the semiconductor film containing a single conductivity impurity element;
• forming a source region and a drain region by removing a part of the semiconductor film containing a single conductivity impurity element using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the semiconductor film;
• forming an island-like semiconductor film by removing a part of the semiconductor film using the source electrode, the drain electrode, and the insulating film as a mask.

A method for manufacturing a light-emitting device having, at least a first semiconductor element and a second semiconductor element in one pixel of the light-emitting device, said method comprising the steps of:

• forming a gate electrode by discharging a composite containing a first conductive material over a substrate;
• forming a gate insulating film over the gate electrode;
• forming a semiconductor film over the gate insulating film;
• forming a semiconductor film containing an impurity element having a conductivity type over the semiconductor film;
• forming a source electrode and a drain electrode by discharging a composite containing a second conductive material over the semiconductor film containing an impurity element having a conductivity type;
• forming a source region and a drain region by removing a part of the semiconductor film containing an impurity element having a conductivity type using the source electrode and the drain electrode as a mask;
• forming an insulating film above a portion serving as a channel region in the semiconductor film;
• pg,53
• forming an island-like semiconductor film and an island-like gate insulating film by removing a part of the semiconductor film using the source electrode, the drain electrode, and the insulating film as a mask.