Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) reducing a thickness of a semiconductor wafer by grinding a rear surface of the semiconductor wafer;
• (b) after the step (a), flattening the rear surface of the semiconductor wafer;
• (c) after the step (b), dividing the semiconductor wafer into a plurality of semiconductor chips;
• (d) disposing a resin adhesive to a front surface of a wiring board;
• (e) after the step (d), holding a first semiconductor chip by using an adsorption block, and disposing the first semiconductor chip over the resin adhesive through a plurality of projecting electrodes formed on a main surface of the first semiconductor chip such that the main surface of the first semiconductor chip faces the front surface of the wiring board, wherein the first semiconductor chip is one of the plurality of semiconductor chips obtained by the step (c);
• (f) after the step (e), pressing a rear surface of the first semiconductor chip by using a pressure block arranged at a rear surface side of the first semiconductor chip through a sheet member, and electrically connecting the plurality of projecting electrodes of the first semiconductor chip with a plurality of electrodes formed on the front surface of the wiring board, wherein the rear surface of the first semiconductor chip opposes to the main surface of the first semiconductor chip;
• (g) after the step (f), mounting a second semiconductor chip over the rear surface of the first semiconductor chip through a die-bonding agent;
• (h) electrically connecting the second semiconductor chip with the wiring board through wires;
• and
• (i) sealing the first semiconductor chip, the second semiconductor chip and the wires with a resin,
• wherein the resin adhesive is not arranged between the rear surface of the first semiconductor chip and the second semiconductor chip.