Method of manufacturing semiconductor sensor
AssigneeDenso Corporation
InventorsKazuhiko Sugiura, Kenichi Yokoyama, Muneo Tamura
Life of this patent
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Abstract
A method of manufacturing a semiconductor sensor includes a forming step, a preparing step, a fixing step and a separating step. In the forming step, a plurality of caps made of resin is formed on a supporting substrate through a separable agent. Each of the caps has a cavity therein. In the preparing step, a semiconductor wafer is prepared, on which a plurality of sensor elements are formed. In the fixing step, the caps are fixed to the semiconductor wafer. Each cavity of the caps corresponds to each of the sensor elements. In the separating step, the separable agent and the supporting substrate are separated from the caps so as to leave the caps on the semiconductor wafer.
Claims8
A method of manufacturing a semiconductor sensor, the method comprising:
- forming a plurality of cap portions by using a resin on a single separable agent formed on a supporting substrate, the cap portions being formed on the single separable agent to be separated from each other;
- forming a cavity in each of the cap portions, wherein:
- the forming of a cavity in each of the cap portions includes
- forming a cap layer on the single separable agent;
- forming a first mask on the cap layer to have apertures at positions corresponding to the cavity in each of the cap portions;
- etching the cap layer using the first mask, so as to form the cavity in each of the cap portions;
- removing the first mask;
- forming a second mask to have apertures at positions corresponding to dividing positions of the cap portions on the cap layer after the removing of the first mask;
- dividing the cap layer into the cap portions by etching using the second mask;
- and
- removing the second mask;
- preparing a semiconductor wafer, on which a plurality of sensor elements are formed;
- fixing the cap portions, which have been formed on the supporting substrate via the single separable agent, to the semiconductor wafer such that the cavity in each of the cap portions corresponds to each of the sensor elements;
- and
- separating the single separable agent together with the supporting substrate from the cap portions so as to leave the cap portions on the semiconductor wafer.
A method of manufacturing a semiconductor sensor, the method comprising:
- coating a supporting substrate with a thermal separable agent, the thermal separable agent comprising an adhesive force that is lowered at a predetermined temperature;
- forming a plurality of separate cap portions on the thermal separable agent and
- forming a cavity in each one of the cap portion by
- forming a cap layer on the thermal separable agent,
- forming a first mask to have apertures at positions corresponding to the cavities, on the cap layer,
- etching the cap layer using the first mask, so as to form the cavities,
- forming a second mask to have apertures at positions corresponding to dividing positions of the cap portions, on the cap layer after a removal of the first mask,
- dividing the cap layer into the cap portions by etching using the second mask, and
- removing the second mask;
- preparing a semiconductor wafer on which a plurality of sensor elements is formed;
- fixing the plurality of cap portions, which have been formed on the supporting substrate via the thermal separable agent, to the semiconductor wafer such that each one of the sensor elements is disposed within the cavity of one of the plurality of cap portions;
- and
- heating the thermal separable agent to the predetermined temperature to separate the thermal separable agent together with the supporting substrate from the cap portion so as to leave the cap portion on the semiconductor wafer.
Dependencies are inferred from the claim text.