Phase change memory device and fabricating method therefor

A method for fabricating a phase change memory (PCM) device, comprising:

• providing a first electrode;
• forming a first insulating layer, a phase change layer, and a second insulating layer in order on the first electrode;
• forming a ring via passing through the second insulating layer and a center via passing through the second insulating layer, the phase change layer, and the first insulating layer, wherein the center via is located at a place corresponding to the center of the ring via;
• forming a second electrode in the ring via, and forming a heating electrode in the center via, wherein the second electrode assumes a ring shape;
• etching the second insulating layer and the phase change layer corresponding to the regions outside the ring-shaped periphery of the second electrode, until the first insulating layer is exposed, such that the phase change layer assumes a disk shape;
• forming a third insulating layer on the first insulating layer and the second insulating layer, for covering the first insulating layer, the second electrode, and the second insulating layer;
• and
• etching the third insulating layer corresponding to the second electrode, until the second electrode is exposed.