Method for fabricating pixel structure

A method for fabricating a pixel structure, the method comprising:

• forming a gate on a substrate;
• forming a gate insulator layer on the substrate to cover the gate;
• forming a semiconductor layer, a conductive layer and a photosensitive black matrix sequentially on the gate insulator layer, wherein the photosensitive black matrix has a color filter containing opening and includes a first portion and a second portion, and wherein a thickness of the first portion is smaller than a thickness of the second portion;
• forming a channel, a source and a drain simultaneously on the gate insulator layer over the gate using the photosensitive black matrix as a mask, wherein the gate, the channel, the source and the drain constitute a thin film transistor (TFT);
• forming a passivation on the photosensitive black matrix, the TFT and the gate insulator layer;
• forming a color filter layer in the color filter containing opening by an inkjet printing process;
• forming a dielectric layer on the black matrix and the color filter layer;
• patterning the dielectric layer and the passivation to expose the drain;
• and
• forming a pixel electrode electrically connected to the drain.