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US 7,598,096 B2Granted
Methods of forming ferroelectric crystals as storage media and structures formed thereby
AssigneeIntel Corporation
InventorLi-Peng Wang
Life of this patent
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Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a conductive layer on a single crystal ferroelectric material, patterning the conductive layer to form contacts, attaching a portion of a circuit on the patterned conductive layer, lapping the single crystal ferroelectric material to a thickness of about 1 to about 10 microns and then etching the single crystal to a thickness below about 25 nm.
Claims15
A method comprising:
- forming a conductive layer on a single crystal ferroelectric material;
- patterning the conductive layer to form contacts;
- attaching a substrate on the patterned conductive layer;
- lapping the single crystal ferroelectric material to a thickness of about 1 to about 10 microns;
- and
- etching the single crystal ferroelectric material to a thickness below about 25 nm.
3 more elements
A structure comprising:
- a patterned conductive layer disposed on a single crystal ferroelectric material;
- and
- a substrate disposed on the patterned conductive layer, wherein the single crystal ferroelectric material comprises a thickness below about 25 nm.
Dependencies are inferred from the claim text.