Exposure apparatus and method

A production method of a semiconductor device, comprising the steps of:

• exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on said substrate of the semiconductor device formed by excimer laser light passed through a mask;
• developing said resist exposed by said light pattern to form a wafer pattern with said resist;
• and
• forming a pattern on said substrate by etching said substrate on which said wafer pattern with said resist is formed;
• wherein in the step of exposing, said light pattern projected on said substrate is formed by excimer laser light which is emitted from plural light sources aligned in a ring-like arrangement and said excimer laser light is passed through a phase shift mask.

A production method of a semiconductor device, comprising the steps of:

• exposing a resist coated on a substrate of a semiconductor device by projecting on said substrate a light pattern formed by excimer laser light emitted from an annular shaped light source and passed through a phase shift mask;
• developing said resist exposed by said light pattern to form a pattern of said resist having a line width which is less than 0.2 μm;
• and
• etching said substrate on which said pattern with said resist is formed.

A production method of a semiconductor device, comprising the steps of:

• exposing a resist coated on a substrate of a semiconductor device by projecting on said substrate a light pattern formed by excimer laser light emitted from plural light sources aligned in a ring-like arrangement and passed through a phase shift mask;
• developing said resist exposed by said light pattern to form a wafer pattern of said resist having a line width which is less than 0.2 μm;
• and
• forming a pattern on said substrate by etching said substrate on which said wafer pattern with said resist is formed.