Film-depositing target and preparation of phase shift mask blank
AssigneesShin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
InventorsHiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga, Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Yuichi Fukushima
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Abstract
For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
Claims5
A method for the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising silicon, molybdenum and zirconium at the same time as constituent elements, said method comprising the steps of:
- disposing a target comprising at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5, and a silicon-base target in a common chamber, and
- inducing electric discharges to both the targets at the same time for sputtering, for thereby depositing the at least one layer of the translucent film having a molar ratio Zr/Mo of 0.05 to 5.
A method for the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising silicon, molybdenum and zirconium at the same time as constituent elements, said method comprising the steps of:
- disposing a target comprising 80 to 99 mole % of silicon and 1 to 20 mole % of zirconium, and a molybdenum-base target comprising 80 to 100 mole % of molybdenum in a common chamber, and
- inducing electric discharges to both the targets at the same time for sputtering, for thereby depositing the at least one layer of the translucent film having a molar ratio Zr/Mo of 0.05 to 5.
A method for the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising silicon, molybdenum and zirconium at the same time as constituent elements, said method comprising the steps of:
- disposing a target comprising 80 to 98 mole % of silicon and 2 to 20 mole % of molybdenum, and a zirconium-base target in a common chamber, and
- inducing electric discharges to both the targets at the same time for sputtering, for thereby depositing the at least one layer of the translucent film having a molar ratio Zr/Mo of 0.05 to 5.
Dependencies are inferred from the claim text.