Oxynitride phosphor and a light emitting device
AssigneesFujikura Ltd., National Institute for Materials Science
InventorsKen Sakuma, Naoki Kimura, Naoto Hirosaki
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Abstract
One preferred embodiment according to the present invention, there is provided an oxynitride phosphor and a light emitting device using the same that is able to reduce production costs and chromaticity shifts. The phosphor is represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y, and has a main phase of substantially an alpha SiAlON crystal structure, wherein the value z is larger than 0 and smaller than 0.15.
Claims14
An oxynitride phosphor represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y,
- wherein a main phase thereof has substantially an alpha SiAlON crystal structure;
- the value z is larger than 0 and smaller than 0.15;
- the value x is from 0.75 to 1.00;
- and
- the value y is from 0.03 to 0.08.
An oxynitride phosphor represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y,
- wherein a main phase thereof has substantially an alpha SiAlON crystal structure,
- the value z is from 0.15 to 0.35;
- the value x is from 0.75 to 1.00;
- and
- the value y is from 0.03 to 0.08.
An oxynitride phosphor represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y,
- wherein a main phase thereof has substantially an alpha-SiAlON crystal structure;
- the value x is from 0.75 to 1.00;
- the value y is from 0.03 to 0.08;
- the value z is from 0 to 1.00;
- the oxynitride phosphor is sintered at a sintering temperature of from 1650 degrees Celsius to 1750 degrees Celsius under a pressurized nitrogen atmosphere;
- and
- a dominant emission wavelength is from 580 nm to 585 nm.
An oxynitride phosphor represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y,
- wherein a main phase thereof has substantially an alpha-SiAlON crystal structure;
- the value x is from 0.75 to 1.00;
- the value y is from 0.03 to 0.08;
- the value z is from 0 to 1.00;
- the oxynitride phosphor is sintered at a sintering temperature of from 1750 degrees Celsius to 1850 degrees Celsius under a pressurized nitrogen atmosphere;
- and
- a dominant emission wavelength is from 583 nm to 588 nm.
An oxynitride phosphor represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y,
- wherein a main phase thereof has substantially an alpha-SiAlON crystal structure;
- the value x is from 0.75 to 1.00;
- the value y is from 0.03 to 0.08;
- the value z is from 0 to 1.00;
- the oxynitride phosphor is sintered at a sintering temperature of from 1850 degrees Celsius to 1950 degrees Celsius under a pressurized nitrogen atmosphere;
- and
- a dominant emission wavelength is from 585 nm to 590 nm.
Dependencies are inferred from the claim text.