ZnO film with C-axis orientation

Abstract

A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al2O3 film overlying the substrate; and, forming a ZnO film overlying the Al2O3 film at a substrate temperature of about 170° C., having a C-axis preference responsive to the adjacent Al2O3 film. The substrate can be a material such as Silicon (Si) (100), Si (111), Si (110), quartz, glass, plastic, or zirconia. The Al2O3 film can be deposited using a chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering process. Typically, the Al2O3 layer has a thickness in the range of about 3 to 15 nanometers (nm). The step of forming the ZnO film having a C-axis preference typically means that the ZnO film has a (002) peak at least 5 times greater than the (100) peak, as measured by X-ray diffraction (XRD).

Dependencies are inferred from the claim text.