Polishing composition and polishing method using the same
AssigneeFujimi Incorporated
InventorShinichiro Takami
Life of this patent
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Abstract
A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent. The polishing composition is suitable for use in polishing an edge of an object such as a semiconductor substrate.
Claims9
A method comprising edge polishing a semiconductor substrate using a polishing composition containing an abrasive, at least one kind of compound selected from imidazole and an imidazole derivative, tetramethylammonium hydroxide, a water-soluble polymer, a chelating agent, and water, and containing no oxidizing agent, wherein the abrasive is contained in the polishing composition in an amount of 35.0% to 50% by mass of the polishing composition, and wherein the tetramethylammonium hydroxide is contained in the polishing composition in an amount of 1.0% to 6% by mass of the polishing composition.
A method for manufacturing a semiconductor substrate, comprising:
- preparing a polishing composition containing an abrasive, at least one kind of compound selected from imidazole and an imidazole derivative, tetramethylammonium hydroxide, a water-soluble polymer, a chelating agent, and water, and containing no oxidizing agent, wherein the abrasive is contained in the polishing composition in an amount of 35.0% to 50% by mass of the polishing composition, and wherein the tetramethylammonium hydroxide is contained in the polishing composition in an amount of 1.0% to 6% by mass of the polishing composition;
- and
- edge polishing a semi-finished product of the semiconductor substrate using the prepared polishing composition.
A method comprising edge polishing a semiconductor substrate using a polishing composition containing colloidal silica with a content of 35.0% by mass of the polishing composition, imidazole with a content in a range of from 1.0 to 4.0% by mass of the polishing composition, tetramethylammonium hydroxide with a content of 1.0% by mass of the polishing composition, hydroxyethyl cellulose with a content of 0.008% by mass of the polishing composition, triethylenetetraminehexaacetic acid or diethylenetriaminepentaacetic acid with a content of 0.08% by mass of the polishing composition, and water, and containing no oxidizing agent.
Dependencies are inferred from the claim text.