Method for fabricating a spacer layer for a magnetoresistive element
AssigneeWestern Digital (Fremont), LLC
InventorsKi-Seok Moon, Chang-Man Park
Life of this patent
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Abstract
A method and system for manufacturing a spacer layer in a magnetoresistive element are described. The spacer layer resides between a free layer and a pinned layer. The method and system include providing a first metallic layer and oxidizing the first metallic layer in a first environment including at least oxygen and a first gas inert with respect to the first metallic layer. The method and system further include providing a second metallic layer and oxidizing the second metallic layer in a second environment including at least oxygen and a first gas inert with respect to the first metallic layer.
Claims14
A method for manufacturing a spacer layer in a magnetoresistive element, the spacer layer residing between a free layer and a pinned layer, comprising;
- providing a first metallic layer;
- oxidizing the first metallic layer in a first environment including at least oxygen and a first gas inert with respect to the first metallic layer;
- providing a second metallic layer;
- oxidizing the second metallic layer in a second environment including at least the oxygen and a second gas inert with respect to the second metallic layer.
A method for manufacturing a spacer layer in a magnetoresistive element, the spacer layer residing between a free layer and a pinned layer, comprising;
- providing a first metallic layer;
- oxidizing the first metallic layer in a first environment including a first premixture of oxygen and argon, the first premixture including between one half and one and one-half percent oxygen;
- providing a second metallic layer;
- oxidizing the second metallic layer in a second environment including a second premixture of the oxygen and the argon, the second premixture including between one half and one and one-half percent oxygen;
- wherein the spacer layer has a thickness of less than between two and twenty Angstroms.
Dependencies are inferred from the claim text.