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US 7,592,207 B2Granted
Light-emitting device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsOsamu Nakamura, Gen Fujii, Fuminori Tateishi
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Abstract
The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.
Claims9
A method of manufacturing a light-emitting device comprising the steps of:
- forming a gate electrode by a droplet discharging method over a substrate;
- forming a gate insulating layer and a first semiconductor film over the gate electrode;
- forming a first mask by a droplet discharging method over the first semiconductor film;
- etching the semiconductor film and the gate insulating layer continuously with the first mask to form a patterned gate insulating film and a patterned first semiconductor film;
- removing the first mask;
- forming a protective layer over the patterned first semiconductor film after removing the first mask;
- forming a second semiconductor film including one conductivity type impurity over the patterned first semiconductor film and the protective layer;
- forming a source wiring and a drain wiring by a droplet discharging method over the second semiconductor film;
- and
- etching the second semiconductor film over the protective layer by the source wiring and the drain wiring as a second mask.
7 more elements
A method of manufacturing a light-emitting device comprising the steps of:
- forming a gate electrode of a switching thin film transistor and a gate electrode of a driving thin film transistor by a droplet discharging method over a substrate;
- forming a gate insulating layer and a first semiconductor film over the gate electrode of the switching thin film transistor and the gate electrode of the driving thin film transistor;
- forming a first mask by a droplet discharging method over the first semiconductor film;
- etching the first semiconductor film and the gate insulating layer continuously with the first mask to form a patterned gate insulating film and a patterned first semiconductor film and to expose a portion of the gate electrode of the driving thin film transistor;
- removing the first mask;
- forming a protective layer over the patterned first semiconductor film after removing the first mask;
- forming a second semiconductor film including one conductivity type impurity;
- forming a source wiring and a drain wiring by a droplet discharging method, at the same time, and connecting at least one of the source wiring and the drain wiring to the gate electrode of the driving thin film transistor;
- and
- etching the second semiconductor film over the protective layer by the source wiring and the drain wiring as a second mask.
7 more elements
A method of manufacturing a light-emitting device comprising the steps of:
- forming a gate electrode by a droplet discharging method over a substrate having an insulating surface or a substrate having a base surface that is exposed to a pretreatment;
- forming a base film over the gate electrode as a pretreatment;
- forming a gate insulating layer and a first semiconductor film over the base film
- forming a first mask by a droplet discharging method over the first semiconductor film;
- etching the first semiconductor film and the gate insulating layer continuously with the first mask to form a patterned gate insulating film and a patterned first semiconductor film;
- removing the first mask;
- forming a protective layer over the patterned first semiconductor film after removing the first mask;
- forming a second semiconductor film including one conductivity type impurity;
- forming a source wiring and a drain wiring by a droplet discharging method;
- and
- etching the second semiconductor film over the protective layer by the source wiring and the drain wiring as a second mask.
8 more elements
A method of manufacturing a light-emitting device comprising the steps of:
- forming a gate electrode of a switching thin film transistor and a gate electrode of a driving thin film transistor by a droplet discharging method over a substrate;
- forming a base film over the gate electrode of the switching thin film transistor and the gate electrode of the driving thin film transistor as a pretreatment;
- forming a gate insulating layer and a first semiconductor film over the base film;
- forming a first mask by a droplet discharging method over the first semiconductor film;
- etching the first semiconductor film and the gate insulating layer continuously with the first mask to form a patterned gate insulating film and a patterned first semiconductor film and to expose a portion of the gate electrode of the driving thin film transistor;
- removing the first mask;
- forming a protective layer over the patterned first semiconductor film after removing the first mask;
- forming a second semiconductor film including one conductivity type impurity;
- forming a source wiring and a drain wiring by a droplet discharging method, at the same time, and connecting one of the source wiring and the drain wiring to the gate electrode of the driving thin film transistor;
- and
- etching the second semiconductor film over the protective layer by the source wiring and the drain wiring as a second mask.
8 more elements
Dependencies are inferred from the claim text.