Embedded metal features structure

An embedded trace substrate comprising:

• a first dielectric layer;
• at least one in-plane bias trace, the at least one in-plane bias trace being embedded in the first dielectric layer such that the at least one in-plane bias trace extends an at least one in-plane bias trace depth into the first dielectric layer;
• at least one in-plane signal trace, the at least one in-plane signal trace being embedded in the first dielectric layer such that the at least one in-plane signal trace extends an at least one in-plane signal trace depth into the first dielectric layer;
• an at least one out-of-plane bias trace comprising a first out-of-plane bias trace and a second out-of-plane bias trace, the at least one out-of-plane bias trace being positioned on a portion of a first dielectric layer first surface, the at least one out-of-plane bias trace extending an at least one out-of-plane bias trace height above the first dielectric layer first surface;
• and
• an at least one out-of-plane signal trace horizontally positioned along the first dielectric layer first surface between the first out-of-plane bias trace and the second out-of-plane bias trace, the at least one out-of-plane signal trace being positioned on a portion of the first dielectric layer first surface, the at least one out-of-plane signal trace extending an at least one out-of-plane signal trace height above the first dielectric layer first surface, wherein the at least one out-of-plane bias trace height is greater than the at least one out-of-plane signal trace height.

An embedded trace substrate comprising:

• a dielectric layer;
• a first in-plane bias trace embedded in the dielectric layer;
• a second in-plane bias trace embedded in the dielectric layer;
• an in-plane signal trace embedded in the dielectric layer and horizontally positioned along a first surface of the dielectric layer between the first and second in-plane bias traces, wherein the first and second in-plane bias traces extend an in-plane bias trace depth into the first dielectric layer and the in-plane signal trace extends an in-plane signal trace depth into the first dielectric layer, the in-plane bias trace depth being greater than the in-plane signal trace depth;
• a first out-of-plane bias trace positioned on the first surface of the dielectric layer;
• a second out-of-plane bias trace positioned on the first surface of the dielectric layer;
• and
• an out-of-plane signal trace horizontally positioned on the first surface of the dielectric layer between the first and second out-of-plane bias traces, wherein the first and second out-of-plane bias traces extend an out-of-plane bias trace height above the first surface of the dielectric layer and the out-of-plane signal trace extends an out-of-plane signal trace height above the first surface of the dielectric layer, the out-of-plane bias trace height being greater than the out-of-plane signal trace height.