Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector

A method of manufacturing a radiation detector comprising:

• providing a silicon substrate with a first surface side and a second surface side opposite thereto, wherein said silicon substrate has a surface area at said first surface side with a doping profile of a certain conduction type;
• depositing a layer of dopant material on top of the first surface of said silicon substrate such that in said silicon substrate a diffusion layer is formed;
• partly covering said layer of dopant material with a first contact layer comprising a metallic material such that first regions and second regions are formed, wherein the layer of dopant material is covered with said first contact layer in said first regions and remains exposed in said second regions;
• depositing a second contact layer comprising a metallic material at said second surface side of said silicon substrate.

A lithographic apparatus comprising:

• an illumination system configured to provide a beam of radiation;
• a support structure configured to support a patterning device that serves to impart said beam of radiation with a pattern in its cross-section;
• a substrate holder configured to hold a substrate in a substrate plane;
• a projection system configured to expose said patterned beam on said substrate;
• wherein said lithographic apparatus further comprises a radiation detector according to a radiation detector having a radiation sensitive surface, said radiation-sensitive surface being sensitive for radiation with a wavelength between 10-200 nm, said radiation detector comprising:
• a silicon substrate having a surface area at a first surface side with a doping profile of a certain conduction type;
• a dopant layer provided on said first surface side of said silicon substrate, said dopant layer comprising a first layer of dopant material and a second layer, said second layer being a diffusion layer which is in contact with said surface area at said first surface side of the silicon substrate;
• a first electrode connected to said dopant layer;
• a second electrode connected to said silicon substrate;
• wherein said surface area at said first surface side of the silicon substrate and said second layer are arranged to form said radiation sensitive surface substantially positioned in said substrate plane.