Semiconductor laser device
AssigneeNichia Corporation
InventorsHiroaki Matsumura, Yasuhisa Kotani
Life of this patent
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Abstract
A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.
Claims27
A semiconductor laser device comprising:
- a substrate;
- a first semiconductor layer of first conductivity type;
- an active layer;
- a second semiconductor layer of second conductivity type that is different from the first conductivity type;
- a waveguide region that is formed in a stripe shape in said second semiconductor layer so that current is restricted to flow in said waveguide region;
- and
- resonance surfaces that are substantially perpendicular to said waveguide region;
- wherein a surface of said second semiconductor layer has a region including at least one recess that is spaced from said waveguide region and is adjacent to one of said resonance surfaces;
- wherein the surface of said second semiconductor layer includes a plurality of recesses that are spaced from said waveguide region and are adjacent to one of said resonance surfaces;
- and
- wherein said plurality of recesses have a linear shape, and the recesses have a side inclined with respect to a resonance surface in a plan view so that light incident is deflected on the side of the recesses into a direction different from a direction of a main beam, thereby effectively suppressing ripples.
A semiconductor laser device comprising:
- a substrate;
- a first semiconductor layer of first conductivity type;
- an active layer;
- a second semiconductor layer of second conductivity type having conductivity type different from the first conductivity type;
- a stripe-shaped ridge formed on said second semiconductor layer;
- and
- a resonance surface that is substantially perpendicular to said ridge;
- wherein a light scattering region is provided at least in said second semiconductor layer in a region that is spaced from the side face of said ridge and adjacent to a light extracting end face side of said resonance surface;
- and
- wherein said light scattering region has a side inclined with respect to a resonance surface in a plan view so that light incident to said light scattering region is deflected into a direction different from a direction of a main beam, thereby effectively suppressing ripples.
A semiconductor laser device comprising:
- a substrate;
- a first semiconductor layer of first conductivity type;
- an active layer;
- a second semiconductor layer of second conductivity type that is different from the first conductivity type;
- a waveguide region that is formed in a stripe shape in said second semiconductor layer so that current is restricted to flow in said waveguide region;
- and
- resonance surfaces that are substantially perpendicular to said waveguide region;
- wherein a surface of said second semiconductor layer has a region including a plurality of recesses that are spaced from said waveguide region;
- wherein a planar configuration of at least two of the recesses have a linear shape, and one of the recesses has a side inclined with respect to a resonance surface in a plan view and another one of the recesses has a side inclined with respect to a resonance surface at a different angle than that of the one of the recesses in a plan view.
Dependencies are inferred from the claim text.