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US 7,583,715 B2Granted
Semiconductor conductive layers
AssigneeStc.Unm
InventorsPeter O. Hill, Larry R. Dawson, Philip Dowd, Sanjay Krishna
Life of this patent
Estimating the term…
Abstract
Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average composition. Furthermore, the superlattice structures may improve the resistivity of the region, improving the current spreading of the region and hence the electronic properties of electronic devices such as optoelectronic devices.
Claims60
An electronic device comprising:
- a substrate;
- a conductive region disposed above the substrate, the conductive region having an average composition of indium aluminum antimonide, the conductive region including a first portion having a doped semiconductor material of a different composition of indium, aluminum, and antimonide from the average composition, the first portion doped to a level higher than a doping level of other portions of the conductive region;
- and
- an active region disposed above the substrate, the active region having material configured to emit light at a desired wavelength of operation, the active region disposed above or below the conductive region relative to the substrate.
1 more element
An electronic device comprising:
- a digital alloy semiconductor superlattice disposed above a substrate, the digital alloy semiconductor superlattice having:
- an average composition of indium aluminum antimonide;
- and
- a layer of semiconductor material having a composition of indium, aluminum, and antimonide different from the average composition, the layer of semiconductor material having a doping level higher than a level for other layers of the digital alloy semiconductor superlattice.
1 more element
An electronic device comprising:
- a digital alloy semiconductor superlattice disposed above a substrate, the digital alloy semiconductor superlattice being an antimonide-based structure, the digital alloy semiconductor superlattice having:
- an average composition;
- a first layer of semiconductor material having a composition different from the average composition;
- and
- a second layer of semiconductor material, wherein both the first layer of semiconductor material and the second layer of semiconductor material have a doping level higher than a level for other layers of the digital alloy semiconductor superlattice.
2 more elements
An electronic device comprising:
- a substrate;
- a superlattice having an average composition of indium aluminum antimonide, the superlattice having a first layer of doped semiconductor material of a different composition of indium, aluminum, and antimonide from the average composition, the first layer more highly doped than a doping level of other layers of the superlattice;
- and
- an active region, the active region having material configured to emit light at a desired wavelength of operation, the active region disposed above or below the superlattice relative to the substrate above which both the active region and the superlattice are disposed.
1 more element
An electronic device comprising:
- a substrate;
- a superlattice having an average composition, the superlattice having a first layer of doped semiconductor material of a different composition from the average composition, the first layer more highly doped than a doping level of other layers of the superlattice;
- an active region, the active region having material configured to emit light at a desired wavelength of operation, the active region disposed above or below the superlattice relative to the substrate above which both the active region and the superlattice are disposed;
- and
- a conductive layer disposed opposite the superlattice relative to the active region, the conductive layer being another superlattice.
2 more elements
An electronic device comprising:
- a substrate;
- a superlattice having an average composition, the superlattice having a first layer of doped semiconductor material of a different composition from the average composition, the first layer more highly doped than a doping level of other layers of the superlattice, the superlattice having a plurality of layers of varying composition and thickness to provide varied vertical current flow or lateral current flow throughout the superlattice, wherein the plurality of layers are varied to provide in a first section of the superlattice a first lateral current flow higher than a first vertical current flow in the first section and in a second section of the superlattice a second vertical current flow higher than a second lateral current flow in the second section;
- and
- an active region, the active region having material configured to emit light at a desired wavelength of operation, the active region disposed above or below the superlattice relative to the substrate above which both the active region and the superlattice are disposed.
1 more element
An electronic device comprising:
- a substrate;
- a superlattice having an average composition, the superlattice having a first layer of doped semiconductor material of a different composition from the average composition, the first layer more highly doped than a doping level of other layers of the superlattice;
- and
- an active region, the active region having material configured to emit light at a desired wavelength of operation, the active region disposed above or below the superlattice relative to the substrate above which both the active region and the superlattice are disposed, wherein the superlattice includes two InxAl1−xSb layers, the two InxAl1−xSb layers having different compositions from each other.
1 more element
An electronic device comprising:
- a substrate;
- a superlattice having an average composition, the superlattice having a first layer of doped semiconductor material of a different composition from the average composition, the first layer more highly doped than a doping level of other layers of the superlattice;
- and
- an active region, the active region having material configured to emit light at a desired wavelength of operation, the active region disposed above or below the superlattice relative to the substrate above which both the active region and the superlattice are disposed, wherein the superlattice includes a layer of Te-doped InxAl1−xSb.
1 more element
A method including:
- forming a conductive region disposed above a substrate, the conductive region having an average composition of indium aluminum antimonide, the conductive region including a first portion having a doped semiconductor material of a composition of indium, aluminum, and antimonide different from the average composition, the first portion doped to a level higher than a doping level of other portions of the conductive region;
- and
- forming an active region disposed above the substrate, the active region having material to emit light at a desired wavelength of operation, the active region disposed above or below the conductive region relative to the substrate.
A method including:
- forming a conductive region disposed above a substrate, the conductive region having an average composition, the conductive region including a first portion having a doped semiconductor material of a composition different from the average composition, the first portion doped to a level higher than a doping level of other portions of the conductive region;
- forming an active region disposed above the substrate, the active region having material to emit light at a desired wavelength of operation, the active region disposed above or below the conductive region relative to the substrate;
- and
- forming a buffer on the substrate coupling the conductive region to the substrate, wherein forming the buffer includes forming a digital alloy semiconductor superlattice of InAlSb layers.
1 more element
A method including:
- forming a conductive region disposed above a substrate, the conductive region having an average composition, the conductive region including a first portion having a doped semiconductor material of a composition different from the average composition, the first portion doped to a level higher than a doping level of other portions of the conductive region;
- forming an active region disposed above the substrate, the active region having material to emit light at a desired wavelength of operation, the active region disposed above or below the conductive region relative to the substrate;
- and
- forming a buffer on the substrate coupling the conductive region to the substrate, wherein the method includes:
- forming the conductive region as a superlattice;
- forming a first cladding layer on the conductive region;
- forming a first waveguiding layer on the cladding region with the active region on the waveguiding layer;
- and
- forming a conductive layer above the active region.
6 more elements
An electronic device comprising:
- a first superlattice disposed above a substrate, the first superlattice being a conductive region having an average composition of indium aluminum antimonide, the first superlattice including a first layer of a doped semiconductor material having a different composition of indium, aluminum, and antimonide from the average composition, the first layer doped to a level higher than a doping level of the other layers of the first superlattice, the first superlattice having a first conductivity type;
- a first cladding layer disposed on the first superlattice;
- a first waveguiding layer disposed on the first cladding layer;
- an active region disposed on the first waveguiding layer and above the substrate, the active region having material to emit light at a desired wavelength of operation;
- a second waveguiding layer disposed on the active region;
- a second cladding layer disposed on the second waveguiding layer;
- and
- a conductive layer disposed on the second cladding layer, the conductive layer having a second conductivity type different from the first conductivity type.
5 more elements
Dependencies are inferred from the claim text.