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US 7,583,547 B2Granted
Over-driving circuit in semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsChae-Kyu Jang, Ju-Young Seo
Life of this patent
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Abstract
A semiconductor memory over-driving scheme for a semiconductor memory device makes it possible to secure a high-speed sensing operation of a memory sense amplifier, regardless of a change of a power supply voltage. Over-driving efficiency is improved by controlling the discharging time and the drivability using different sized the drivers when the power supply voltage fluctuates while the bit line over-driving operation is performed.
Claims20
A semiconductor memory device, comprising:
- a bit line sense amplifier;
- a voltage fluctuation detecting block for outputting a first signal and a second signal in response to a fluctuation generated when a potential level of a power supply voltage is different from a predetermined potential level;
- a pull-up line driving block for applying the power supply voltage to a pull-up line of the bit line sense amplifier through a first path in response to the first signal;
- and
- a voltage regulating block for controlling, in response to the second signal, a potential level of a driving voltage applied to the pull-up line, by controlling a drivability of a driver to additionally apply the power supply voltage to the pull-up line and controlling a discharging time required to discharge the driving voltage applied to the pull-up line.
2 more elements
A semiconductor device, comprising:
- a voltage fluctuation detecting block for detecting a fluctuation signal generated when a potential level of a power supply voltage is different from a predetermined potential level;
- a plurality of drivers which are different from each other in size, being turned on individually for driving a pull-up line of a bit line sense amplifier;
- and
- a voltage regulating block for controlling a driving voltage on the pull-up line by controlling the plurality of drivers individually in response to the fluctuation signal from the voltage fluctuation detecting block and by controlling a discharging time to discharge the driving voltage.
1 more element
A semiconductor device, comprising:
- a voltage detecting block for detecting a fluctuation of a power voltage inputted from an external block;
- a voltage driving block for supplying a driving voltage into an internal block based on a detection result of the voltage detecting block;
- and
- a voltage regulating block for controlling a potential level of the driving voltage supplied to the internal block by using an additional voltage and controlling a discharging time required to discharge the driving voltage.
1 more element
Dependencies are inferred from the claim text.