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US 7,583,542 B2Granted
Memory with charge storage locations
AssigneeFreescale Semiconductor, Inc.
InventorHoracio P. Gasquet
Life of this patent
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Abstract
A method for operating a memory device includes selecting a cell comprising an array of word lines, selecting a word line within said array and applying an operating voltage to said selected word line. A shielding voltage is also applied to the closest adjacent facing word line of said selected word line. This may prevent unintended, program, read, or erase of said unselected word line. The remainder of unselected word lines can be floated.
Claims15
A method for erasing a memory device, the method comprising:
- selecting a cell comprising an array of word lines;
- selecting a word line within said array, wherein the array consists of said selected word line, a closest adjacent facing word line of said selected word line, and unselected word lines;
- applying an operating voltage to said selected word line;
- applying a shielding voltage to said closest adjacent facing word line of said selected word line;
- and
- floating the unselected world lines of said array while applying the operating voltage to said selected word line.
3 more elements
A method for erasing a memory device, the method comprising:
- selecting a cell comprising an array of word lines;
- selecting a word line within said array;
- applying a first operating voltage to said selected word line;
- applying a first shielding voltage to the closest adjacent facing word line of said selected word line;
- applying a second operating voltage to an adjacent word line of said selected word line;
- applying a second shielding voltage to the closest adjacent facing word line of said adjacent word line;
- and
- floating the remainder of the unselected word lines of the array while applying the first operating voltage to said selected word line.
5 more elements
Dependencies are inferred from the claim text.