Non-volatile storage with bias for temperature compensation

A non-volatile storage system, comprising:

• a set of non-volatile storage elements formed, at least in part, on a substrate;
• a set of word lines in communication with the set of non-volatile storage elements, at least one non-volatile storage element of the set of non-volatile storage elements is in communication with a selected word line of the set of word lines;
• and
• one or more control circuits in communication with the set of non-volatile storage elements, the one or more control circuits provide temperature-dependent biasing of the substrate and during the biasing:
• perform an operation on the at least one non-volatile storage element;
• apply a temperature-independent voltage to at least one of a source side and a drain side of the set of non-volatile storage elements;
• and
• apply a temperature-dependent read or verify voltage to a selected word line of one or more non-volatile storage elements undergoing read or verify operations;
• wherein the temperature-dependent read or verify voltage varies with temperature according to a first temperature coefficient, and the temperature-dependent biasing of the substrate varies with temperature according to a second temperature coefficient which differs from the first temperature coefficient.