Biasing non-volatile storage to compensate for temperature variations

A method for operating non-volatile storage, comprising:

• biasing a substrate on which a set of non-volatile storage elements are formed, at least in part, the set of non-volatile storage elements is associated with a set of word lines, the biasing is set to vary with temperature to compensate at least one temperature-varying characteristic of non-volatile storage elements of the set of non-volatile storage elements;
• during the biasing, applying a voltage to a source side of the set of non-volatile storage elements, separately from the biasing;
• and
• during the biasing and the applying, performing a read or verify operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines.

A method for operating non-volatile storage, comprising:

• biasing a substrate on which a set of non-volatile storage elements are formed, at least in part, the set of non-volatile storage elements is associated with a set of word lines;
• during the biasing, applying a voltage to a source side of the set of non-volatile storage elements, separately from the biasing, and applying temperature-dependent voltages to unselected word lines of the set of word lines;
• and
• during the biasing and the applying, performing a read or verify operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines.

A method for operating non-volatile storage, comprising:

• biasing a substrate on which a set of non-volatile storage elements are formed, at least in part, the set of non-volatile storage elements is associated with a set of word lines;
• during the biasing, applying a voltage to a source side of the set of non-volatile storage elements, separately from the biasing;
• the biasing comprises applying a temperature-independent voltage to the substrate, and the voltage applied to the source side is temperature-dependent;
• and
• during the biasing and the applying, performing a read or verify operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines.

A method for operating non-volatile storage, comprising:

• biasing a substrate on which a set of non-volatile storage elements are formed, at least in part, the set of non-volatile storage elements is associated with a set of word lines;
• during the biasing, applying a voltage to a source side of the set of non-volatile storage elements, separately from the biasing;
• the biasing comprises applying a temperature-dependent voltage to the substrate, and the voltage applied to the source side is temperature-independent;
• and
• during the biasing and the applying, performing a read or verify operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines.

A method for operating non-volatile storage, comprising:

• biasing a substrate on which a set of non-volatile storage elements are formed, at least in part, the set of non-volatile storage elements is associated with a set of word lines, where a level of the biasing decreases as temperature increases;
• during the biasing, applying a voltage to a source side of the set of non-volatile storage elements, separately from the biasing;
• and
• during the biasing and the applying, performing a read or verify operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines.

A method for operating non-volatile storage, comprising:

• biasing a substrate on which a set of non-volatile storage elements are formed, at least in part, the set of non-volatile storage elements is associated with a set of word lines, the biasing comprises applying a forward body bias;
• during the biasing, applying a voltage to a source side of the set of non-volatile storage elements, separately from the biasing;
• and
• during the biasing and the applying, performing a read or verify operation on at least one non-volatile storage element of the set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of the set of word lines.