Semiconductor device with high-breakdown-voltage transistors

A semiconductor device comprising a unit high-breakdown-voltage transistor including first to fourth high-breakdown-voltage transistors which are commonly connected at one end of each of current paths thereof,

• the first high-breakdown-voltage transistor is connected to a first write line at the other end of the current path thereof, and includes a first gate which is disposed in a first direction;
• the second high-breakdown-voltage transistor is connected to a second write line at the other end of the current path thereof, and includes a second gate which is disposed in a second direction crossing the first direction;
• the third high-breakdown-voltage transistor is connected to a third write line at the other end of the current path thereof, and includes a third gate which is disposed in the first direction;
• and
• the fourth high-breakdown-voltage transistor is connected to a fourth write line at the other end of the current path thereof, and includes a fourth gate which is disposed in the second direction.