Random access memory including nanotube switching elements

A memory cell, comprising

• first and second nanotube switching elements, each nanotube switching element capable of at least two memory states and each nanotube switching element comprising:
• first and second conductive terminals;
• a nanotube article having at least one electrically conductive nanotube, said article physically disposed between and capable of electrical communication with the first and second conductive terminals;
• control structure capable of controllably forming and unforming an electrically conductive channel between said first and second conductive terminals wherein said channel includes said nanotube article;
• and
• an electronic memory element capable of at least two memory states and having cross-coupled first and second inverters wherein an input node of the first inverter is coupled to an output node of the second inverter and an input node of the second inverter is coupled to an output node of the first inverter;
• wherein the input node of the first inverter is coupled to the control structure of the first nanotube switching element and to the second conductive terminal of the second nanotube switching element;
• and
• wherein the input node of the second inverter is coupled to the control structure of the second nanotube switching element and to the second conductive terminal of the first nanotube switching element;
• and
• wherein the control circuitry selectively transfers the state of the electronic memory to the state of the nanotube switching elements and selectively transfers the state of the nanotube switching elements to the state of the electronic memory.