Method of driving storage device
AssigneeSony Corporation
InventorsTsunenori Shiimoto, Nobumichi Okazaki, Hironobu Mori, Tomohito Tsushima
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Abstract
A method of driving a storage device including a variable resistance element in which resistance value is changed reversibly between a high resistance state and a low resistance state by applying voltages with different polarities between two electrodes is provided. The storage device includes a plurality of memory cells formed of the variable resistance elements. The method includes the step of applying voltages more than once in combination to the memory cell when the variable resistance element is changed from the low resistance state to the high resistance state.
Claims9
A method of driving a storage device including a variable resistance element in which resistance value is changed reversibly between a high resistance state and a low resistance state by applying voltages with different polarities between two electrodes, the storage device including a plurality of memory cells formed of the variable resistance elements, the method comprising:
- applying voltages more than once in combination to the memory cell when the variable resistance element is changed from the low resistance state to the high resistance state.
Dependencies are inferred from the claim text.