US 7,583,306 B2 · Solid state imaging device with reduced cell pitch and driving method thereof

Abstract

A solid state imaging device, including: a plurality of storage wells which stores an optically generated charge that is generated at a photoelectric conversion region corresponding to an incident light, the plurality of storage wells being inside a substrate; wherein a plurality of the photoelectric conversion regions is arrayed on the substrate in a two dimensional matrix; a plurality of amplifiers each installed per every pair of the photoelectric conversion regions that are adjacent in one direction of the two dimensional matrix, outputting a pixel signal that corresponds to the optically generated charge retained in a floating diffusion region; a plurality of transfer controlling elements, a pair of which is installed in every pair of the photoelectric conversion regions, changing a potential barrier of an optically generated charge transfer route, the transfer route being between each of the storage wells in the pair of the photoelectric conversion regions and the corresponding floating diffusion region, and controlling a transfer of the optically generated charges; wherein each of the plurality of transfer controlling elements has a transfer gate installed on the substrate being separated by an insulation film, and an electric charge retention region being inside the substrate, retaining the optically generated charge under the transfer gate; and wherein each of the plurality of amplifiers is provided with a transistor, a gate of each transistor having a ring-like shape, each of the gates being installed in a manner that at least a part of the gate is sandwiched by portions which are parts cut-off from each pair of the transfer gates, the pair of the transfer gates being adjacent in one direction of the two dimensional matrix.

Claims13

Dependent claims

A solid state imaging device, comprising:

a first photoelectric conversion element that generates electric charges corresponding to an incident light;
a circuit element including a first gate electrode, a terminal, a first well, and a first carrier pocket formed in the first well, the first carrier pocket overlapping the first gate electrode, a potential of the terminal being controlled corresponding to electric charges stored in the first carrier pocket;
and
a transfer element positioned between the first photoelectric conversion element and the circuit element, the transfer element transferring electric charges between the first photoelectric conversion element and the circuit element, the transfer element including a second gate electrode, a second well separated from the first well, and a second carrier pocket formed in the second well, the second carrier pocket overlapping the second gate electrode.

1 more element

A method of driving a solid state imaging device that includes:

a photoelectric conversion element generating electric charges corresponding to an incident light, the photoelectric conversion element including an accumulating well storing electric charges;
a circuit element including a first gate electrode, a terminal, a first well, and a first carrier pocket formed in the first well, the first carrier pocket overlapping the gate electrode, a potential of the terminal being controlled corresponding to electric charges stored in the first carrier pocket;
a transfer element positioned between the photoelectric conversion element and the circuit element, the transfer element including a second gate electrode, a second well separated from the first well, and a second carrier pocket formed in the second well, the second carrier pocket overlapping the second gate electrode;
and
a diffusion portion positioned between the first well and the second well, the method comprising:
accumulating electric charges in the photoelectric conversion element while a potential of the second well is controlled to be greater than a potential of the accumulating well;
transferring electric charges from the accumulating well to the second carrier pocket while a potential of the channel of the transfer element is controlled to be less than a potential of the accumulating well and a potential of the diffusion portion.

4 more elements

Dependencies are inferred from the claim text.

Solid state imaging device with reduced cell pitch and driving method thereof

Life of this patent

Solid state imaging device with reduced cell pitch and driving method thereof

Life of this patent

Abstract

Claims13