MEMS switches having non-metallic crossbeams
AssigneeThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration
InventorMaximillian C Scardelletti
Life of this patent
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Abstract
A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.
Claims20
An RF MEMS switch comprising:
- a crossbeam, which is an elongate member having two ends, comprising a non-metallic, electrically-conductive material, and extending transversely over and above a plurality of transmission lines;
- and
- means for biasing the crossbeam, causing an electrostatic force to deflect the cross beam to contact at least one of the transmission lines;
- and
- means for controlling the electrical conductivity of the crossbeam by ion implantation.
An RF MEMS switch comprising:
- a crossbeam, which is an elongate member having two ends, comprising a non-metallic, electrically-conductive material, and extending transversely over and above a plurality of transmission lines;
- and
- means for biasing the crossbeam, causing an electrostatic force to deflect the cross beam to contact at least one of the transmission lines;
- and
- the crossbeam has a thickness of approximately 80 microns.
A method of forming an RF MEMS switch comprising:
- depositing a crossbeam, which is an elongate member having two ends, comprising a non-metallic, electrically-conductive material, and extending transversely over and above a plurality of transmission lines;
- controlling the electrical conductivity of the crossbeam by ion implantation;
- and
- controlling stress in the crossbeam by controlling the thickness of the crossbeam and by annealing the crossbeam.
An RF MEMS switch prepared by a process comprising the steps of:
- depositing a crossbeam, which is an elongate member having two ends, comprising a non-metallic, electrically-conductive material, and extending transversely over and above a plurality of transmission lines;
- and
- controlling the electrical conductivity of the crossbeam by ion implantation.
Dependencies are inferred from the claim text.