High frequency magnetic thin film filter

A microstrip device comprising:

• a GaAs substrate;
• a first Ag electrode layer overlying the substrate;
• a NiFe layer overlying the first electrode layer;
• a SiO2 dielectric layer overlying the NiFe layer;
• a Fe layer overlying the dielectric layer;
• and
• a second Ag electrode layer overlying the Fe layer.

A method of filtering ranges of frequencies of electromagnetic waves, said method comprising the steps of:

• (a) providing at least one electromagnetic wave;
• (b) passing at least one of said waves through a microstrip device comprising
• (i) a substrate;
• (ii) a first electrode layer overlying the substrate;
• (iii) at least two layers of different high internal field/high resonance frequency materials overlying the first electrode layer;
• (iv) at least one layer of dielectric material between each said layer of high internal field/high resonance frequency material;
• and
• (v) a second electrode layer overlying a top layer of said layers of high internal field/high resonance frequency material.

A method of filtering variable ranges of frequencies of electromagnetic waves, said method comprising the steps of:

• (a) providing at least one electromagnetic wave;
• (b) passing at least one of said waves through a microstrip device comprising
• (i) a substrate;
• (ii) a first electrode layer overlying the substrate;
• (iii) at least two layers of different high internal field/high resonance frequency materials overlying the first electrode layer;
• (iv) at least one layer of dielectric material between each said layer of high internal field/high resonance frequency material;
• and
• (v) a second electrode layer overlying a top layer of said layers of high internal field/high resonance frequency material;
• (c) applying an external magnetic field to said microstrip device to modify the ranges of frequencies of said waves to be filtered.

A method of forming a device, said method comprising the steps of:

• (a) providing a microstrip device comprising
• (i) a substrate;
• (ii) a first electrode layer overlying the substrate;
• (iii) at least two layers of different high internal field/high resonance frequency materials overlying the first electrode layer;
• (iv) at least one layer of dielectric material between each said layer of high internal field/high resonance frequency material;
• and
• (v) a second electrode layer overlying a top layer of said layers of high internal field/high resonance frequency material;
• and
• (b) coupling said microstrip device to a means for receiving electromagnetic waves.

A method of forming a device, said method comprising the steps of:

• (a) providing a microstrip device comprising
• (i) a substrate;
• (ii) a first electrode layer overlying the substrate;
• (iii) at least two layers of different high internal field/high resonance frequency materials overlying the first electrode layer;
• (iv) at least one layer of dielectric material between each said layer of high internal field/high resonance frequency material;
• and
• (v) a second electrode layer overlying a top layer of said layers of high internal field/high resonance frequency material, and
• (b) coupling said microstrip device to a means for receiving an external magnetic field, said means to enable an application of a variable external magnetic field to said device.